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Power Transistors 2SC5145 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 10.00.3 1.50.1 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings 800 800 500 8 10 5 3 40 1.3 150 -55 to +150 Unit V V V 1.5max. 1.1max. 10.5min. 2.0 0.80.1 0.5max. 2.540.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.40.3 1.00.1 8.50.2 6.00.3 10.00.3 V A A A W C C 1.5-0.4 2.0 3.0-0.2 4.40.5 0.80.1 2.540.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *V CEO(sus) (TC=25C) Symbol ICBO IEBO VCEO(sus) hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf * Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 0.2A, L = 25mH VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = - 0.6A, VCC = 200V min typ max 100 100 4.40.5 Unit A A V 500 15 8 1 1.5 8 1 3 1 V V MHz s s s Test circuit 50/60Hz mercury relay L 25mH 120 6V 1 15V X Y G 14.70.5 +0.4 +0 1 Power Transistors PC -- Ta 50 8 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25C 7 2SC5145 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 -25C 0.1 0.03 0.01 0.01 0.03 25C TC=100C VCE(sat) -- IC Collector power dissipation PC (W) Collector current IC (A) 40 (1) 6 5 4 3 2 1 0 IB=1200mA 1000mA 800mA 600mA 400mA 300mA 200mA 150mA 100mA 50mA 20mA 30 20 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 1000 IC/IB=5 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C hFE -- IC 1000 VCE=5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 100 TC=100C 30 -25C 10 3 1 0.3 0.1 0.01 0.03 25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 300 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=-IB2) VCC=200V TC=25C tstg ton tf Area of safe operation (ASO) 10 ICP 3 1 0.3 0.1 0.03 0.01 IC 10ms DC t=0.5ms 1ms Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 0.1 Switching time ton,tstg,tf (s) 10 3 1 0.3 0.1 0.03 0.01 Collector current IC (A) 8 Non repetitive pulse 0.003 T =25C C 0 1 2 3 4 5 6 7 1 3 10 30 100 300 1000 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 8 7 Lcoil=50H IC/IB=5 (IB1=-IB2) TC=100C 2SC5145 Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 -IB2 VCC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10 Thermal resistance Rth(t) (C/W) 102 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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